Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer


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Fabian.Kneier [ at ] awi.de

Abstract

The vertical movement of a 40 nm thin Au film on a silicon substrate during intense nanosecond (ns) laser irradiation is determined on the nm vertical and ns time scales using an optimized Michelson interferometer. The balanced setup with two detectors uses the inverse interference signal and accounts for transient reflectivity changes during irradiation. We show that a change in phase shift upon reflection must be taken into account to gain quantitative results. Three distinct fluence regimes can be distinguished, characterized by transient reflectivity behavior, dewetting processes and film detachment. Maximum displacement velocities are determined to be 0.6 m/s and 1.9 m/s below and above the melting threshold of the metal, respectively. Flight velocities of detaching liquid films are found to be between 30 and 70 m/s for many nanoseconds.



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ISI/Scopus peer-reviewed
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Published
Eprint ID
31264
DOI 10.1007/s00339-012-7235-5

Cite as
Kneier, F. , Geldhauser, T. , Scheer, E. , Leiderer, P. and Boneberg, J. (2013): Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer , Applied Physics A, 110 (2), pp. 321-327 . doi: 10.1007/s00339-012-7235-5


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